Gate-Tunable Transport and 1D Channel in a Graphene Nanoslide (2512.22982v1)

Abstract: We present a theory of the graphene nanoslide, a fundamental device for graphene straintronics that realizes a single pseudogauge barrier. We solve the scattering problem in closed form and demonstrate that the nanoslide gives rise to a hybrid pseudogauge and electrostatic cavity in the bipolar regime, and hosts one-dimensional transverse channels. The latter can be tuned using a bottom gate between valley chiral or counterpropagating modes, as well as one-dimensional flatbands. Hence, the local density of states near the barrier depends strongly on the gate voltage with a tunable sublattice and electron-hole asymmetry. In the presence of electron-electron interactions, the nanoslide allows for in-situ tuning between a chiral and ordinary Tomonaga-Luttinger liquid.