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First-Principles Investigation of Surface-Induced Effects on the Properties of Divacancy Qubits in 3C-SiC (2511.09436v1)
Published 12 Nov 2025 in cond-mat.mtrl-sci and cond-mat.mes-hall
Abstract: Near-surface divacancy defects in cubic silicon carbide exhibit modified properties due to surface-induced symmetry breaking, as revealed by our first-principles calculations. The spin Hamiltonian is modulated by the defect's depth and orientation, providing key insights for engineering robust SiC-based quantum devices and nanoscale sensors.
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