Simulation of current-driven magnetisation switching in nanopillars with Perpendicular Shape Anisotropy

Abstract: The Perpendicular Shape Anisotropy Spin Transfer Torque Magnetic Random Access Memory (PSA-STT-MRAM) is a recent concept proposed to maintain the thermal stability of standard MRAM at small diameters, considering thick vertical pillars as the free layer. In order to explore the specific physics of PSA-STT-MRAMs expected in relation with their three-dimensional nature, we have performed simulations combining a micromagnetic model coupled self-consistently with spin-dependent transport equations. The 3D shape induces flower states at the upper and lower surfaces. Besides, the field-like component of STT is found to be larger than in standard MRAMs, suggesting that it needs to be considered. The combination of both effects leads to the excitation of high-order 3D ferromagnetic resonance modes, playing a key role in magnetisation reversal. These results highlight features of 3D nanomagnetic systems, largely disregarded so far, which need to be considered to optimise PSA-STT-MRAM to be a competitive solution for technological implementation.