A general and modular approach to solid-state integration and readout of zero-dimensional quantum systems (2407.11189v3)

Abstract: Here, we present an all-electrical readout mechanism for quasi-0D quantum states (0D-QS) such as point defects, adatoms and molecules, that is modular and general, providing an approach that is amenable to scaling and integration with other solid-state quantum technologies. Our approach relies on the crea-tion of high-quality tunnel junctions via the mechanical exfoliation and stacking of multi-layer gra-phene (MLG) and hexagonal boron nitride (hBN) to encapsulate the target system in an MLG/hBN/0D-QS/hBN/MLG heterostructure. This structure allows for all-electronic spectroscopy and readout of candidate systems through a combination of coulomb and spin-blockade. As a proof of principle, we demonstrate electronic tunneling spectroscopy of point defects in hBN and the molecular qubit vanadyl phthalocyanine (VOPc). Our approach demonstrates a new pathway for the incorporation of molecules and atomic defects into solid-state quantum devices and circuits along with a readout scheme that does not rely on highly-constrained optical processes for photonic readout.