Features and Peculiarities of Gate-Voltage Modulation of Spin-Orbit Interaction in FeCoB Nanomagnets: Insights into the Physical Origins of the VCMA Effect (2404.15695v2)
Abstract: The paper investigates the systematic dependencies of the anisotropy field and the strength of spin-orbit (SO) interaction on gate voltage in Ta/FeB/MgO nanomagnets. Our findings reveal an intriguing opposite polarity in the gate-voltage dependencies of the anisotropy field and the coefficient of SO interaction across all studied nanomagnets. This opposite polarity indicates that the gate-voltage modulation of spin-orbit interaction is not the primary contributor to the voltage-controlled magnetic anisotropy (VCMA) effect. Instead, the gate-voltage modulation of magnetization emerges as the most probable candidate, given its polarity aligns with the observed modulation of anisotropy. The modulation of magnetic anisotropy is influenced by two major contributions of opposite polarities, which effectively counterbalance each other and reduce the overall VCMA effect. Optimizing the balance between these contributions could potentially lead to a substantial enhancement of the VCMA effect. Our measurements did not detect any modulation of the in-plane component of spin accumulation by the gate voltage.
- M. Tsujikawa and T. Oda, Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(001)PtFePt001\mathrm{Pt}/\mathrm{Fe}/\mathrm{Pt}(001)roman_Pt / roman_Fe / roman_Pt ( 001 ): A first-principles study, Phys. Rev. Lett. 102, 247203 (2009).
- L. Landau and E. Lifshitz, The Classical Theory of Fields (Pergamon, 1975).
- V. Zayets, Peculiarities of spin-orbit interaction systematically measured in fecob nanomagnets, arXiv 2312.11056, 1 (2023a).
- V. Zayets et al., Unexpected opposite dependencies of anisotropy field and strength of spin-orbit interaction on gate voltage measured in fecob nanomagnet, MMM , CPA (2022a).
- V. Zayets, Parametric mechanism of the magnetization reversal as a low- power recording mechanism for mram. measurement of spin- accumulation- induced in-plane magnetic field in a feb nanomagnet, Journal of Magnetism and Magnetic Materials , 171631 (2023b).
- V. Zayets, I. Serdeha, and V. Grygoruk, Systematic study of the strength of vcma effect in nanomagnets of small and large strength of spin-orbit interaction., in Intermag 2023 (2023) pp. DPC–03.
- V. Zayets, I. Serdeha, and V. Grygoruk, Unexpected opposite dependencies of anisotropy field and strength of spin-orbit interaction on gate voltage measured in fecob nanomagnet, in MMM 2022.The 67th Annual Conference on Magnetism and Magnetic Materials (2022) pp. CPA–04.
- V. Zayets and A. S. Mishchenko, Hall effect in ferromagnetic nanomagnets: Magnetic field dependence as evidence of inverse spin hall effect contribution, Phys. Rev. B 102, 100404 (2020).
- V. Zayets, Spin rotation after a spin-independent scattering. spin properties of an electron gas in a solid, Journal of Magnetism and Magnetic Materials 356, 52 (2014).
- V. Zayets, Spin transport of electrons and holes in a metal and in a semiconductor, Journal of Magnetism and Magnetic Materials 445, 53 (2018).
Collections
Sign up for free to add this paper to one or more collections.