Doped Mott Insulators in (111) Bilayers of Perovskite Transition-Metal Oxides with a Strong Spin-Orbit Coupling (1210.2290v3)

Abstract: The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit coupling. These models are characterized by the antiferromagnetic Heisenberg interaction and the anisotropic interaction whose form depends on the $d$ orbital occupancy. From exact diagonalization analyses on finite clusters, the ground state phase diagrams are derived, including a Kitaev spin liquid phase in a narrow parameter regime for $t_{2g}$ systems. Slave-boson mean-field analyses indicate the possibility of novel superconducting states induced by carrier doping into the Mott-insulating parent systems, suggesting the present model systems as unique playgrounds for studying correlation-induced novel phenomena. Possible experimental realizations are also discussed.