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An intrinsic mobility ceiling of Si bulk (1109.1311v1)
Published 6 Sep 2011 in cond-mat.mes-hall
Abstract: We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of $8.4\cdot106 cm2/V\cdot s$. We suggest that this result is related to the lowest effective mass of the $<001>$ direction.
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