Quantify switching-related carrier scattering in fractional-quantum ferroelectrics

Quantify the carrier-scattering effects of correlated atomic motion, domain nucleation, and domain-wall propagation during polarization reversal in monolayer fractional-quantum ferroelectric In₂Se₃ and determine how these slow or quasi-static disorder mechanisms affect carrier mobility.

Background

The reported mobilities are phonon-limited upper bounds because the calculations omit several extrinsic and switching-related scattering mechanisms. In particular, polarization reversal may involve correlated atomic motion, domain nucleation, and domain-wall propagation, all of which can generate slow or quasi-static disorder capable of scattering charge carriers.

The paper explicitly identifies a quantitative assessment of these switching-related scattering processes as unresolved. Addressing this problem would determine whether the high phonon-limited mobility predicted for fractional-quantum ferroelectric α-In₂Se₃ persists under realistic polarization-switching conditions.