Correlate indium selenide phase composition with electronic properties

Establish a rigorous, quantitative correlation between the phase composition and stacking order of indium selenide materials (including InSe polytypes and the α-, β-, and β′-In2Se3 phases) and their electronic properties that impact device performance, by synthesizing phase-pure samples and performing multimodal structural and electronic characterization to link polymorph content to transport and band structure features.

Background

Indium selenides exhibit rich polymorphism and multiple stacking orders, which strongly influence electronic and ferroelectric behavior. Small energy differences among phases and stacking sequences can lead to phase mixtures and stacking faults, especially after mechanical processing, complicating reproducible device performance.

Although Raman spectroscopy is commonly used to identify phases, closely spaced modes and mixtures can hinder definitive assignment, underscoring the need for comprehensive, correlated structural–property studies that directly link phase composition to electronic characteristics in devices.