Indium selenides for next-generation low-power computing devices (2503.12708v1)

Abstract: As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional (2D) transition metal dichalcogenides have been extensively investigated, van der Waals indium selenides--particularly InSe and In2Se3--offer a compelling alternative with distinct advantages for next-generation electronics. Unlike conventional 2D semiconductors, indium selenides combine exceptional electron mobility (exceeding 1,000 cm^2V^-1s^-1), high thermal velocity (>2x10^7 cm/s), thickness-tunable bandgaps (0.97-2.5 eV), and unique phase-dependent ferroelectric properties, enabling both high-performance logic and non-volatile memory functions within a single material system. This perspective critically evaluates the materials properties, fabrication challenges, and device applications of indium selenides, examining their potential to surpass silicon in ultra-scaled transistors through ballistic transport while simultaneously offering ferroelectric memory capabilities impossible in conventional semiconductors. We analyze recent breakthroughs in ballistic InSe transistors, tunnel field-effect transistors, and In2Se3-based ferroelectric devices for information storage, and identify key research priorities for addressing persistent challenges in scalable synthesis, phase control, and oxidation prevention. By bridging fundamental materials science with practical device engineering, we provide a roadmap for translating the exceptional properties of indium selenides into commercially viable, low-power computing technologies that can overcome the limitations of silicon while enabling novel computing architectures.