Dice Question Streamline Icon: https://streamlinehq.com

Mechanistic origin of OGB-ligand advantages in perovskite nanocrystal memristors

Elucidate the exact physico-chemical mechanism by which oleylguanidinium bromide (OGB) ligands improve endurance and regulate electrochemical reactions in CsPbBr3 nanocrystal memristors, leading to superior volatile and non-volatile switching performance.

Information Square Streamline Icon: https://streamlinehq.com

Background

The thesis reports record endurance and robust reconfigurability in OGB-capped CsPbBr3 nanocrystal memristors compared to DDAB-capped devices. While larger OGB ligands are hypothesized to provide better isolation and reaction control, the underlying mechanism is not fully understood.

Clarifying this mechanism would inform material design and fabrication strategies for reconfigurable memristors that serve both volatile reservoir elements and non-volatile synaptic weights.

References

While the exact mechanism is still unknown, the larger size of the OGB ligands compared to DDAB ( 2.3 nm vs. 1.7 nm ) could intuitively provide better isolation to the CsPbBr3NCs and prevent excess electrochemical redox reactions of Ag+ and Br -, modulating the formation and rupture of conductive filaments.

— Analog Alchemy: Neural Computation with In-Memory Inference, Learning and Routing (2412.20848 - Demirag, 30 Dec 2024) in Section 4.3 (Drift Mode of the Perovskite Reconfigurable Memristor)