Identify the most successful emerging nonvolatile memory technologies

Determine which emerging technologies for nonvolatile memory, in competition with magnetic memory technologies such as spin-transfer torque magnetic random access memory (STT‑MRAM), spin‑orbit torque MRAM (SOT‑MRAM), and electric‑field‑controlled magnetic memories, will ultimately emerge to be the most successful for practical nonvolatile memory applications.

Background

The notes compare magnetic memories, particularly STT‑MRAM and its variants, with other nonvolatile memory technologies. While magnetic approaches benefit from nonvolatility and high endurance, they currently require relatively large write currents, motivating research into alternatives such as SOT‑MRAM and electric‑field control of magnetization. The broader landscape includes additional nonmagnetic nonvolatile memories discussed elsewhere in the notes (e.g., ferroelectric and phase‑change memories), all competing for future adoption.

The author explicitly notes the competitiveness of this landscape and the uncertainty about which technologies will ultimately dominate practical nonvolatile memory applications, framing a clear unresolved question about future technological success.