Meeting V_T accuracy and stability for Flash arrays used as computing elements

Demonstrate whether Flash memory arrays employed as computing elements for artificial neural network applications can satisfy stringent requirements on threshold-voltage placement accuracy and long-term stability given the reliability constraints of Flash memory designs.

Background

Flash memories are highly reliable storage media for digital data but their use as active computing elements imposes stricter requirements, including accurate placement and stability of the threshold voltage (V_T) of memory transistors over time.

The authors highlight that, unlike digital storage where powerful ECCs and system-level strategies are used, maintaining V_T accuracy and stability for computing functionality under the known reliability constraints of Flash technologies has not yet been fully demonstrated.