Experimentally verify CrSb-based altermagnetic tunnel-junction predictions

Experimentally verify the predicted magnetoresistance and multistate resistance switching in CrSb-based altermagnetic tunnel junctions, including CrSb/β-InSe/CrSb and α-In2Se3-barrier architectures.

Background

CrSb is presented as an experimentally established metallic altermagnet with a high Néel temperature and substantial spin splitting near the Fermi level. First-principles calculations predict large tunneling magnetoresistance in CrSb/β-InSe/CrSb junctions and multiple nonvolatile resistance states in CrSb-based multiferroic tunnel junctions with an α-In2Se3 barrier. These results remain theoretical until corresponding devices are fabricated and their predicted transport responses are measured.

References

These predictions have not yet been experimentally verified, but they are important because CrSb combines metallic conduction, a Néel temperature near $700\mathrm{K}$ , and experimentally established spin splitting close to the Fermi level.

— Spin-Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions  (2609.29857 - Duan et al., 24 Sep 2026) in Section 6, paragraph beginning “CrSb provides a complementary”