Electronic transport and interfacial effects in BSTS/MoS2 heterostructures

Determine whether topological surface states are preserved in individual vapor-phase-grown Bi2−xSbxTe3−ySey platelets on semiconducting MoS2 and whether the Bi2−xSbxTe3−ySey/MoS2 interface induces measurable charge transfer or band bending, using direct electrical transport and magnetotransport measurements.

Background

The paper establishes a vapor-phase method for growing Bi2−xSbxTe3−ySey (BSTS) platelets directly on semiconducting MoS2 and characterizes their morphology, Raman response, and thickness-dependent composition. Although the heterostructures provide a platform for investigating electronically active interfaces, the study does not perform electrical or magnetotransport measurements on individual platelets.

The authors therefore identify two unresolved experimental issues: whether the topological surface states survive when BSTS is grown on MoS2, and whether coupling at the BSTS/MoS2 interface produces measurable charge transfer or band bending. Resolving these issues is necessary to assess the electronic and topological functionality of the heterostructures.