Exploring binary intermetallics for advanced interconnect applications using ab initio simulations (2504.19676v1)

Abstract: The challenge of increasing copper (Cu) resistivity with diminishing Cu interconnect dimensions in complementary metal-oxide-semiconductor (CMOS) transistors, along with the imperative for efficient electron transport paths to fulfill scaling requirements in interconnects is significant. First-principles electronic structures calculations based on density functional theory have been performed to evaluate the potential scalability of some Cu, Al, Ru and Mo based binary alloys to replace Cu. We evaluate the expected sensitivity of the resistivity of these binary alloys to reduced line dimensions with a figure of merit that is based on generalized finite-temperature transport tensors. These transport tensors allow for a straightforward comparison between highly anisotropic intermetallics with given transport directions and Cu, and are evaluated together with their resistance to electromigration. Based on the figure-of-merit analysis, we identify several aluminides that show potential to outperform Cu at reduced interconnect dimensions in terms of their electronic transport and reliability properties.