Influence of Gamma-X mixing on optical orientation and alignment of excitons in (In,Al)As/AlAs quantum dots (2312.04683v1)

Abstract: The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin orientation and optical alignment in a magnetic field, an increase in the anisotropic exchange splitting of excitonic levels (from approximately 0.6 to 5 ueV) due to the Gamma-X mixing was revealed. The extent of direct electronic states admixing to indirect ones depends on the size of the quantum dot. On the other hand, the optical and spin properties of excitons change radically with increasing of the Gamma states admixture to the X states: in the absence of a magnetic field, the optical orientation of excitons decreases from 18 to 3%, while the alignment of excitons is restored from 6 to 53%.