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Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators (1608.06588v3)
Published 23 Aug 2016 in cond-mat.mes-hall
Abstract: We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.