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Optical signatures of states bound to vacancy defects in monolayer MoS$_2$

Published 27 May 2015 in cond-mat.mes-hall | (1505.07511v1)

Abstract: We show that pristine MoS$2$ single layer (SL) exhibits two bandgaps $E{g\parallel}=1.9$ eV and $E_{g\perp}=3.2$ eV for the optical in-plane and out-of-plane susceptibilities $\chi_\parallel$ and $\chi_\perp$, respectively. In particular, we show that odd states bound to vacancy defects (VDs) lead to resonances in $\chi_\perp$ inside $E_{g\perp}$ in MoS$_2$ SL with VDs. We use density functional theory, the tight-binding model, and the Dirac equation to study MoS$_2$ SL with three types of VDs: (i) Mo-vacancy, (ii) S$_2$-vacancy, and (iii) 3$\times$MoS$_2$ quantum antidot. The resulting optical spectra identify and characterize the VDs.

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