2000 character limit reached
Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe (1101.2627v1)
Published 13 Jan 2011 in cond-mat.mes-hall and cond-mat.mtrl-sci
Abstract: We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.