Gate Voltage-Controlled Magnetic Anisotropy Effect on Pt-Porphyrin functionalized single-layer graphene (2507.04177v1)

Abstract: This report presents for the first time the investigation of a novel class of functionalized graphene showing a large Voltage Controlled Magnetic Anisotropy Effect (VCMA) with enhanced Spin-Orbit Coupling (SOC), which holds promise for applications in Spintronics devices aimed at ultra-low power memory and logic functionalities. Our study was conducted at the interface of Single Layer chemical vapor deposition (CVD) method-grown graphene (SLG hereafter) grafted with Platinum(II) 5,10,15,30-(tetraphenyl) porphyrin (Pt-Porphyrin hereafter) and NiFe(Py hereafter). The stability of Pt-Porphyrin functionalized SLG at room temperature granted the execution of voltage-dependent Spin Torque Ferromagnetic resonance (ST-FMR) measurements. A substantial VCMA coefficient of 375.6 (fJV-1m-1) was determined at the interface, and the Spin torque efficiency ({\theta}sh) was improved by an order of one in functionalized graphene to compare with pristine SLG