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Signature of surface state coupling in thin films of the topological Kondo insulator SmB$_6$ from anisotropic magnetoresistance
Published 1 Dec 2016 in cond-mat.str-el and cond-mat.mes-hall | (1612.00399v2)
Abstract: The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB$6$ thin films are reported. We find that the AMR changes sign from negative ($\rho{||}<\rho_{\perp}$) at high temperatures to positive ($\rho_{||}>\rho_{\perp}$) at low temperatures. The temperature, T$_s$, at which this sign change occurs, decreases with increasing film thickness $t$ and T$_s$ vanishes for $t$ $>$ 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.
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