Role of electron-irradiation and oxygen-atmosphere effects during ultra-low-energy ion irradiation

Determine whether the preferential boron displacement observed at intermediate electron energies and the preferential boron removal observed during electron irradiation in a low-pressure oxygen atmosphere also occur during ultra-low-energy singly charged argon-ion irradiation of monolayer hexagonal boron nitride.

Background

The paper compares defect formation mechanisms under electron irradiation with those under approximately 150 eV Ar+ irradiation of monolayer hBN. Prior electron-irradiation studies found preferential displacement or removal of boron, including preferential boron removal from pore edges in a low-pressure oxygen atmosphere.

The authors explicitly state that it remains unclear whether these effects carry over to ultra-low-energy singly charged ion irradiation. The issue is unresolved in the study because the experiments characterize the resulting defects but do not establish whether the electron-irradiation and oxygen-mediated trends govern the ion-induced process.

References

Whether these effects play a role also for ultra-low-energy singly-charged ion irradiation of hBN remains unclear.

Competition between vacancy creation and filling in defect-engineering of hBN  (2609.11666 - Chokappa et al., 10 Sep 2026) in Introduction, paragraph discussing electron-irradiation effects