Origin of electron–hole asymmetry in monolayer 1T-TaIrTe4

Determine whether the qualitative splitting of the conduction-band singularity produced by the DFT+$U$ calculation underlies the different behavior of monolayer 1T-TaIrTe4 under electron and hole doping observed experimentally.

Background

The authors find that the effect of the Hubbard correction differs substantially between the conduction and valence bands. For U=2.5U=2.5 eV, the conduction-band singularity splits by more than 20 meV, whereas the valence-band singularity remains intact. They identify this difference as a possible explanation for the experimentally observed asymmetry between electron and hole doping, but its relevance remains unresolved.

References

It remains to be understood if this qualitative change underlies the different behavior of 1T-TaIrTe$_4$ under electron and hole doping observed in experiment.

— Quasi-one-dimensional topological band structure and van Hove singularities in monolayer TaIrTe$_4$ from laser $μ$-ARPES  (2608.20978 - Boban et al., 21 Aug 2026) in Section Main, paragraph beginning “To connect our findings to transport data on gated devices”