Origin of hole doping in monolayer 1T-TaIrTe4

Determine whether the hole doping observed in monolayer 1T-TaIrTe4 arises from defects in the crystals or from charge transfer to the graphite and graphene encapsulation layers.

Background

Laser micro-focus ARPES measurements find that the chemical potential in the measured monolayer 1T-TaIrTe4 samples lies slightly below the valence-band maximum, producing a small elliptical hole pocket at the Brillouin-zone center. The authors identify two possible origins for this doping—crystal defects or charge transfer involving the graphite and graphene encapsulation layers—but do not distinguish between them experimentally.

References

At present, it is not clear if the hole doping arises from defects in our crystals or is induced by charge transfer to the graphite and graphene encapsulation layers.

— Quasi-one-dimensional topological band structure and van Hove singularities in monolayer TaIrTe$_4$ from laser $μ$-ARPES  (2608.20978 - Boban et al., 21 Aug 2026) in Section Main, paragraph accompanying Figure 2