Multiscale modeling across the intermediate device scale

Extend integrated descriptions of plasma growth, defect physics, ionic transport, and electrical switching across the intermediate micrometre-to-millimetre device scale while retaining the influence of atomistic material-structure variations.

Background

The paper develops a multiscale framework linking reactive sputter-deposition conditions, atomistic defect formation, copper redistribution, and macroscopic switching behavior in TiN/SiO₂/Cu/SiO₂/TiN devices. Existing approaches can connect reactor-scale plasma conditions with surface- and feature-scale processes, but the authors identify the intermediate device scale as a missing link. Resolving this gap is necessary for predicting how atomistic disorder propagates into device-level functionality and variability.