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Experimental confirmation of BCD-driven non-linear Hall response in trigonal tellurium

Establish experimentally the Berry curvature dipole-induced non-linear Hall response in trigonal elemental tellurium, verifying the predicted effect in this material system.

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Background

Trigonal tellurium (space groups P3_121 and P3_221) is a chiral, narrow-gap semiconductor hosting Weyl points near the Fermi level. The authors compute Berry curvature and Berry curvature dipole (BCD) using first-principles (HSE) and Wannier-based methods, finding opposite signs of Berry curvature and BCD between the two enantiomers and pronounced BCD peaks near Weyl points.

While recent experiments have observed chirality-dependent non-linear conductivity in tellurium, the specific BCD-driven non-linear Hall response predicted by theory has not yet been directly observed. The authors explicitly note that this experimental confirmation remains outstanding.

References

However, our predicted BCD-driven non-linear Hall response still awaits experimental confirmation.

Chirality-tunable non-linear Hall effect (2407.17775 - Joseph et al., 25 Jul 2024) in Section “Trigonal Tellurium and HgS”, Subsubsection “Electronic structure and Berry curvature properties”