Critical disorder threshold for gapless-mode emergence

Derive a closed analytic expression for the critical disorder strength and impurity concentration at which gapless modes emerge in the disordered Kagome strip.

Background

The numerical results show that sufficiently strong disorder and increasing impurity concentration can reduce the spectral gap and produce a gapless regime. The threshold depends on both the disorder strength and impurity concentration.

The paper does not obtain an analytic criterion locating this transition. It only establishes that the critical disorder strength must exceed the band gap of the host system, leaving the precise critical values unresolved.

References

In this work, we have not been able to find a closed analytic expression for the critical disorder strength (and impurity concentration) at which the gapless modes emerge. It is clear, however, that it has to be at least larger than the band gap of the host system.

Disorder-induced conducting edges on Kagomé lattice  (2608.24472 - Chmeruk et al., 25 Aug 2026) in Discussion and Outlook, Section 4