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Electron-phonon coupling in a magic-angle twisted-bilayer graphene device (2110.14916v1)

Published 28 Oct 2021 in cond-mat.mes-hall, cond-mat.mtrl-sci, and cond-mat.str-el

Abstract: The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles $\theta=0{\circ}$, $\sim 1.1{\circ}$ (magic-angle) and $\sim 7{\circ}$ (large angle). The results show a broad and p/n-asymmetric doping behavior at the magic-angle, in clear contrast to the behavior observed in twist angles above and below. Atomistic modeling reproduces the experimental observations, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band linewidth. Our findings indicate a connection between electron-phonon coupling and experimental observations of strongly correlated phenomena in magic-angle TBG.

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