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Fe3GeTe2: Layered vdW Ferromagnet

Updated 6 July 2026
  • Fe3GeTe2 is a layered van der Waals ferromagnet characterized by strong perpendicular magnetic anisotropy, tunable Curie temperatures, and itinerant electron behavior.
  • Density-functional and DMFT studies reveal a spin-asymmetric Fermi surface with 70–80% polarization near the Fermi level, underpinning giant tunneling magnetoresistance.
  • FGT hosts chiral spin textures such as Néel-type skyrmions and spiral phases whose magnetic and transport properties can be engineered via thickness and interfacial modifications.

Fe3_3GeTe2_2 (FGT) is a layered van der Waals ferromagnet that has been investigated as an itinerant metallic magnet, a correlated $3d$-electron system with Kondo-lattice phenomenology, a platform for chiral spin textures and multiple Hall responses, and an electrode or active layer in spintronic heterostructures. Most studies describe crystalline FGT as a hexagonal layered compound with strong perpendicular magnetic anisotropy and ferromagnetic ordering in the 150\sim 150–$230$ K range, while sputtered amorphous or interfacially modified forms exhibit semiconducting transport or proximity-induced magnetic behavior not present in pristine bulk crystals. Across these realizations, FGT has been used to probe electronic correlation, Bloch-state-controlled tunneling, bulk spin-orbit torque, exchange bias, and skyrmion physics (Zhu et al., 2015, Li et al., 2019, Wang et al., 2019, Zhao et al., 2023).

1. Crystal chemistry and electronic structure

In the crystalline limit, FGT is usually described as a layered hexagonal compound with space group P63/mmcP6_3/mmc, often also characterized as a CdI2_2-type structure. The basic structural motif is a Te–Fe–Ge–Fe–Te slab, with weak van der Waals coupling between adjacent slabs along the cc axis. Several studies emphasize two inequivalent Fe sites within the layer, a monolayer thickness of about $0.8$ nm, and honeycomb-like or slightly buckled Fe-based in-plane networks. One exchange-bias study instead describes FGT as rhombohedral with space group R3ˉmR\bar{3}m, so the crystallographic description is not entirely uniform across the literature summarized here (Huang et al., 2021, Zhao et al., 2020, Wang et al., 2019, Balan et al., 2023).

Its low-energy electronic structure is consistently Fe-2_20 dominated with substantial hybridization to Ge-2_21 and Te-2_22 states. Density-functional calculations for bulk FGT show a strongly spin-asymmetric Fermiology: majority-spin bands cross 2_23 over large regions of the Brillouin zone, whereas minority-spin states form only a few small pockets, producing a density-of-states spin polarization near 2_24 on the order of 2_25–2_26. In transport calculations this asymmetry is central because the number of conducting channels at fixed 2_27 is much larger for the majority spin than for the minority spin. Beyond one-electron DFT, LDA+DMFT yields substantial narrowing of the 2_28 bands in the 2_29 window, a coherence peak at $3d$0, and spectral density closer to photoemission than spin-polarized GGA alone, establishing the role of dynamical correlation in the ferromagnetic metal (Li et al., 2019, Zhu et al., 2015).

2. Magnetic order, anisotropy, and correlation effects

FGT is reported as a ferromagnet with a strong out-of-plane easy axis or perpendicular magnetic anisotropy, but the exact ordering scale depends strongly on sample thickness, stoichiometry, and device context. Bulk and thick-flake values are variously reported as $3d$1 K, $3d$2–$3d$3 K, $3d$4–$3d$5 K, and $3d$6 K, whereas one flux-grown single-crystal study reports $3d$7 K. For exfoliated nanoflakes, representative values include $3d$8 K for $3d$9 nm, 150\sim 1500 K for 150\sim 1501 nm, and 150\sim 1502 K for 150\sim 1503 nm, while monolayer FGT is reported near 150\sim 1504 K. Representative magnetic parameters likewise vary by method and geometry: 150\sim 1505 for 150\sim 1506 at 150\sim 1507 K in one single-crystal study, 150\sim 1508 at 150\sim 1509 K in another, and a bulk moment of $230$0 from magnetization and XMCD analysis. The uniaxial anisotropy is large, with values such as $230$1 at $230$2 K and $230$3 reported for thin heterostructure samples (Wang et al., 2019, Zhang et al., 2021, Bera et al., 10 Jul 2025, Wu et al., 2019, You et al., 2019).

Electronic correlation is unusually prominent for a $230$4 ferromagnet. The experimentally determined Sommerfeld coefficient $230$5 exceeds the GGA-derived $230$6, giving $230$7, while LDA+DMFT produces a lower-bound renormalization of about $230$8. STS and ARPES studies summarized in the Kondo-hole work further identify broad peaks at $230$9 mV and P63/mmcP6_3/mmc0 mV assigned to itinerant ferromagnetic P63/mmcP6_3/mmc1 bands, a narrow Kondo-resonance shoulder at P63/mmcP6_3/mmc2 mV, and heavy-fermion quasiparticles below a coherence scale. Within that framework, FGT is modeled as a Kondo lattice coexisting with Ising ferromagnetism, with nearest-neighbor Fe(I)–Fe(I) Ising exchange P63/mmcP6_3/mmc3 meV and Fe vacancies acting as Kondo holes that enhance the local Kondo resonance, with P63/mmcP6_3/mmc4 K inferred from a Fano half-width of P63/mmcP6_3/mmc5 meV (Zhu et al., 2015, Zhao et al., 2020).

Lattice dynamics couple directly to the magnetic state. Raman measurements on few-layer FGT identify two P63/mmcP6_3/mmc6 phonons and one doubly degenerate P63/mmcP6_3/mmc7 phonon at room temperature, with the P63/mmcP6_3/mmc8 mode reversing photon helicity and thereby exhibiting phonon chirality with pseudo-angular momentum. Below the Curie temperature, the phonon frequency and linewidth deviate strongly from a symmetric anharmonic decay model, and the spin-phonon coupling constant extracted from the P63/mmcP6_3/mmc9 mode is 2_20. Two additional modes around 2_21 emerge only at cryogenic temperature as the Raman susceptibility is enhanced in the magnetically ordered phase (Du et al., 2019).

3. Charge transport, Hall response, and spin-dependent tunneling

Magnetotransport measurements on single crystals identify a clear electron-magnon contribution to the resistivity. Below about 2_22 K, 2_23 is well described by 2_24; from 2_25 K up to 2_26 K the best fit is 2_27; and above 2_28 the resistivity is linear in temperature. The same study reports positive non-saturating magnetoresistance at low temperature for 2_29, nearly linear negative magnetoresistance at high fields below cc0 due to suppression of magnons, and a Khosla-Fischer form cc1 above cc2 K, with cc3cm and cc4. In the same data set the anomalous Hall coefficient follows cc5 with cc6, and the temperature dependence of the side-jump term tracks the field-induced change in resistivity attributed to magnon suppression. In that interpretation, the anomalous Hall effect is dominated by extrinsic side-jump scattering from magnons rather than by a purely intrinsic topological-band-structure contribution (Saha et al., 2022).

FGT is also notable as an electrode material in coherent van der Waals magnetic tunnel junctions. First-principles transport calculations for Fecc7GeTecc8graphenecc9Fe$0.8$0GeTe$0.8$1 and Fe$0.8$2GeTe$0.8$3-BN$0.8$4Fe$0.8$5GeTe$0.8$6 predict giant tunneling magnetoresistance,

$0.8$7

with $0.8$8 and $0.8$9 for the graphene spacer, corresponding to R3ˉmR\bar{3}m0, and R3ˉmR\bar{3}m1 and R3ˉmR\bar{3}m2 for the R3ˉmR\bar{3}m3-BN spacer, corresponding to R3ˉmR\bar{3}m4. The central mechanism is a Bloch-state mismatch in the antiparallel configuration: because spin and R3ˉmR\bar{3}m5 are conserved in coherent tunneling, majority states on one side must connect to minority states on the other, but those states occupy disjoint regions of the two-dimensional Brillouin zone. The same work finds that replacing graphene or R3ˉmR\bar{3}m6-BN by vacuum preserves the qualitative R3ˉmR\bar{3}m7-resolved transmission pattern, indicating that the giant TMR is set primarily by the bulk spin structure of FGT rather than by interface chemistry (Li et al., 2019).

4. Chiral spin textures and topological transport

Direct imaging has established that thin FGT can host chiral textures without an added heavy-metal underlayer. Off-axis electron holography and Lorentz TEM on R3ˉmR\bar{3}m8 nm nanoflakes reveal zero-field-stabilized Néel-type skyrmions at cryogenic temperature, together with spirals and field-polarized ferromagnetic states in a temperature-field phase diagram. In zero field, a fluctuating spiral phase appears just below R3ˉmR\bar{3}m9 K and condenses into skyrmions that remain stable down to 2_200 K; on warming, skyrmions persist to about 2_201 K and then dissolve into spirals. Thickness is decisive: 2_202–2_203 nm flakes show zero-field skyrmions, 2_204–2_205 nm flakes show coexisting short spirals and skyrmions, flakes thicker than 2_206 nm are spiral-dominated, and flakes thinner than 2_207 nm show no domain contrast at zero field. From the thickness-driven skyrmion–spiral boundary the interfacial DMI is estimated as 2_208, while DFT+SOC gives 2_209 (Wang et al., 2019).

Topological Hall signatures in FGT occur in several distinct geometries. A planar topological Hall effect was reported in a uniaxial single crystal when the magnetic field rotates into the hard 2_210 plane, with the PTHE persisting for all 2_211 and reaching 2_212cm at 2_213 K and 2_214 T. That work attributes the signal to an internal gauge field produced either by topological domains or by a non-coplanar spin structure formed during in-plane magnetization. A later planar-geometry study found that below 2_215 K a topological cusp in the Hall response coexists with positive longitudinal magnetoresistance dominated by spin-flip scattering, both confined to the unsaturated regime below a characteristic field 2_216 and to a narrow polar-angle window 2_217. In that data set, 2_218 T, the positive MR reaches about 2_219–2_220 at 2_221 K, and the topological Hall amplitude is 2_222–2_223cm at the same temperature, supporting a common origin in a field-tilted, non-coplanar spin phase (You et al., 2019, Bera et al., 10 Jul 2025).

Interfacial and moiré engineering extend this topological sector. In WTe2_224/FGT heterostructures, inversion-symmetry breaking and strong spin-orbit coupling from 1T2_225-WTe2_226 induce a DMI of about 2_227, yielding a topological Hall signal below 2_228 K and directly imaged Néel-type skyrmions with diameters of about 2_229 nm at 2_230 K and 2_231 nm at 2_232 K; the zero-field stripe width is about 2_233 nm. In twisted metallic FGT bilayers, a giant topological Hall effect appears only in the “magic” twist-angle window 2_234–2_235, where 2_236 reaches about 2_237cm between 2_238 and 2_239 K. Using

2_240

that work extracts 2_241 at 2_242 and 2_243 K, corresponding to an experimental skyrmion diameter of about 2_244 nm, while micromagnetic simulation gives about 2_245 nm and attributes the phase to alternating in-plane and layer-contrasting DMI with 2_246–2_247 meV (Wu et al., 2019, Kim et al., 15 Mar 2026).

5. Disorder, proximity effects, exchange bias, and chemical substitution

FGT remains ferromagnetic even when long-range crystalline order is removed. Room-temperature magnetron sputtering produces amorphous films with no detectable FGT lattice fringes in HRTEM or STEM-EDS and no FGT reflections in XRD, yet XPS indicates that the local Fe, Ge, and Te valence states remain essentially identical to those of crystalline FGT. In these amorphous films, Arrott-plot analysis gives 2_248 K for thicknesses 2_249 nm and 2_250 K at 2_251 nm, closely tracking the thickness dependence reported for crystalline FGT. Magnetoresistance measurements further show two switching dips associated with domain-wall transport even in a single amorphous monolayer, leading that study to argue that long-range ferromagnetic order in FGT need not correlate with two-dimensional crystalline order (Zhao et al., 2023).

A different sputtered realization is semiconducting rather than metallic. In sputtered Fe2_252GeTe2_253 films with atomic percentages Fe:Ge:Te = 2_254, XRD shows no Fe2_255GeTe2_256 reflections even at 2_257 nm, and all single layers from 2_258 to 2_259 nm show semiconducting 2_260 with 2_261. Pure amorphous FGT exhibits an anomalous Hall effect only below about 2_262 K, but FGT2_263/Pt2_264 shows square anomalous-Hall loops already at 2_265 K with 2_266 T and 2_267, and VSM loops remain open at 2_268 K. In that system, first-principles calculations for Pt adsorbed on a crystalline FGT monolayer give an enhanced interfacial exchange 2_269 meV compared with about 2_270 meV in bare FGT, while the measured spin Hall magnetoresistance ratio is about 2_271 at 2_272 K, with an effective spin Hall angle 2_273 and 2_274 nm (Zhao et al., 2023).

Exchange bias and coercivity can also be engineered chemically. In Co-phthalocyanine/FGT heterostructures, the exchange-bias field reaches about 2_275 Oe at 2_276 K for a 2_277 nm FGT flake and remains measurable to approximately 2_278 K, consistent with a spinterface picture in which CoPc spins acquire antiferromagnetic order by proximity and pin the FGT reversal. In CrPS2_279/(O-FGT)/FGT heterostructures, the bias is smaller for a pristine interface, 2_280 mT, but reaches about 2_281 mT for the naturally oxidized interface and shows non-monotonic temperature dependence with blocking scales near 2_282 K, 2_283 K, and 2_284 K attributed to CrPS2_285, FeO, and Fe2_286O2_287, respectively. Substitution on the Fe site provides another control parameter: in 2_288, increasing 2_289 suppresses both 2_290 and the ordered moment, but near 2_291 the domain-wall pinning is strongly enhanced, with 2_292 kOe and 2_293 for 2_294. That Co-doping study also argues that the low-field zero-field-cooled “kink” previously interpreted as an antiferromagnetic transition is better understood as a domain-wall pinning–depinning crossover (Jo et al., 2023, Balan et al., 2023, Tian et al., 2019).

6. Local probes, current-driven control, and nanostructures

Quantum sensing with spin defects in 2_295BN provides spatially resolved access to both static and fluctuating magnetism in FGT. In one wide-field imaging platform, an exfoliated FGT flake of thickness 2_296 nm is capped by an 2_297 nm 2_298BN layer containing boron-vacancy spin defects generated by He2_299 implantation, with the defect-to-FGT distance estimated at $3d$00 nm. ODMR and relaxometry mapping show a perpendicular magnetization $3d$01 kG at $3d$02 K, gradual demagnetization up to $3d$03 K, and domain-wall motion with saturation by about $3d$04 G at $3d$05 K. The relaxation rate peaks near the Curie region at $3d$06 K with $3d$07 kHz, from which the authors extract $3d$08 and a spin-diffusion constant $3d$09 (Huang et al., 2021).

Current-induced torques in FGT are unusual because the monolayer has noncentrosymmetric $3d$10 symmetry even though the three-dimensional bulk is commonly described by $3d$11. Harmonic Hall measurements on a $3d$12 nm flake identify dominant bulk spin-orbit torques with damping-like effective fields per current density exceeding $3d$13 at $3d$14 K, while the field-like term ranges from about $3d$15 to $3d$16. The sign reversal between $3d$17 and $3d$18 is consistent with the bulk-symmetry-allowed form of the torque, and the torque persists from $3d$19 K to near $3d$20 (Martin et al., 2021).

The same current responsiveness enables direct coercivity control and memory operation. In nm-thin Hall-bar devices, increasing in-plane current density produces a monotonic reduction of the coercive field: around $3d$21, $3d$22 is reduced by about $3d$23, and by $3d$24 the hard magnetic state is driven to a soft state with $3d$25. The extracted torque coefficient is $3d$26, and a memory demonstrator switches at $3d$27 under a small out-of-plane bias field. Nanoribbon calculations extend this device picture to the edge-dominated limit: monolayer FGT ribbons show non-collinear edge magnetism with canting angles of about $3d$28–$3d$29 decaying over roughly $3d$30–$3d$31 Å, an orbital Hall conductivity near $3d$32 about $3d$33 times the spin Hall conductivity, and deterministic spin-orbit- or spin-transfer-torque switching for $3d$34–$3d$35 on sub-$3d$36 ps timescales in atomistic simulations (Zhang et al., 2021, Cardias et al., 17 Feb 2025).

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