Incipient superconductivity and tunable Chern insulators in twisted Bernal bilayer-trilayer graphene

Abstract: Moiré superlattices assembled by twisting Bernal and rhombohedral multilayer graphene host a rich set of interaction-driven magnetic and topological states, yet superconductivity has not been observed in these systems except in proximity to a transition-metal dichalcogenide. Here we report incipient superconductivity and tunable Chern insulators in twisted Bernal bilayer-trilayer graphene encapsulated by hexagonal boron nitride. Across twist angles from $θ= 1.05<sup>\circ$ to $1.50<sup>\circ$, Chern insulators form at integer and fractional moiré fillings for electron doping, with Chern numbers up to |C| = 3 set by twist angle and tuned by doping. At $θ= 1.18<sup>\circ$, a symmetry-broken metallic region forms for hole doping and hosts a trivial insulator at band filling $ν= -2$. Displacement field alone drives this insulator into a pocket of incipient superconductivity with a sharp transition, a well-defined critical current, and a critical temperature that peaks near the insulating boundary, although the resistance does not fall to zero. In-plane magnetic field expands the pocket, which persists to more than four times the weak-coupling Pauli limit, and stabilizes a second pocket in which Fraunhofer-like modulation of the critical current signals phase-coherent pairing. Twisted Bernal bilayer-trilayer graphene thus offers a single gate-tunable system in which pairing can be interfaced with Chern insulators whose topology is itself an adjustable parameter.