Anisotropic Short-Range Order Modulates Ferroelectric Switching in Wurtzite ScAlN Alloys

Abstract: Ferroelectric switching in wurtzite alloys is typically understood in terms of composition, strain, defects, and interfaces, while local chemical order is often neglected or treated as a secondary perturbation. Here we show that short-range order (SRO) is a previously overlooked microscopic variable that substantially influences the intrinsic switching barrier. Using first-principles canonical sampling, we find that wurtzite ScAlN develops a robust, highly anisotropic SRO that challenges the conventional random-alloy picture. This ordering suppresses in-plane Sc--N--Sc motifs while enhancing columnar mixed-cation chains along the polar $c$ axis, reflecting the symmetry-distinct polar and basal directions of the wurtzite lattice and reorganizing its polar connectivity. Relative to random-alloy structures, SRO systematically increases the intrinsic switching barrier across a broad composition range. Motif-resolved analysis further identifies the population of columnar Sc--N--Al--N--Sc motifs as the primary structural descriptor underlying switching-barrier variations among configurations with different local order. These results establish anisotropic SRO as an independent degree of freedom for tuning ferroelectric switching. More broadly, they reveal how local chemical order can couple to the symmetry-distinct directions of a polar semiconductor lattice to modify functional behavior. Our findings lay a foundation for SRO engineering as a route to tailoring switching barriers without changing alloy composition.