Mid-infrared Assisted THz Phonon Amplification in a 2D Semiconductor for Room Temperature Detection

Abstract: Efficient and selective excitation of lattice vibrations is central to controlling energy flow at the nanoscale, yet remains challenging under conventional optical excitation. Here, we introduce a mid-infrared-assisted phonon amplification approach, termed MIRAPA, that enables efficient energy injection directly into vibrational bonds. Using surface-enhanced resonant Raman scattering in few-layer $\mathrm{MoS_2}$, we exploit strong exciton--phonon coupling to monitor phonon populations. When mid-infrared (MIR) light is introduced, it couples directly to out-of-plane lattice vibrations, leading to room-temperature phonon amplification exceeding $80\%$. Crucially, MIRAPA bypasses electronic excitation pathways, allowing the MIR power density to be nearly $300\times$ lower than that required for visible excitation to achieve comparable enhancement. The resulting phonon modulation is robust, persisting over more than $2800$ on/off cycles and exceeding $15$ hours of continuous-wave laser illumination without degradation. Quantitative analysis yields an effective noise-equivalent power of approximately $0.3\,\mathrm{nW}/\sqrt{\mathrm{Hz}}$ for MIR detection, highlighting the sensitivity of the approach. By combining vibrational selectivity, low-power operation, and long-term stability, MIRAPA provides a robust platform for probing and amplifying phonons in two-dimensional semiconductors. These results open new opportunities for nanoscale vibrational sensing, mid-infrared detection, and phonon-based coherent devices, including routes toward phonon lasing.