Heterogeneous Transfer of Thin Film BaTiO3 onto Silicon for Device Fabrication

Abstract: Thin film BaTiO3 has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO3 on silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. How- ever, synthesis of high-quality BaTiO3 directly on silicon remains a challenge. Here, we synthesize BaTiO3 using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift-off. Hybrid metal-organic MBE en- ables self-regulated synthesis of highly stoichiometric thin films at high growth rates (>100nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free BaTiO3 making it a potentially scalable method. Finally, we demonstrate the applicability of our process to device fabrication through characterization of lithographically-patterned and etch-transferred sub-micron features.