Topology-Directed Silicide Formation: An Explanation for the Growth of C49-TiSi$_2$ on the Si(100) Surface

Abstract: Designing metal-semiconductor junctions is essential for optimizing the performance of modern nanoelectronic devices. A widely used material is TiSi$_2$, which combines low electronic resistivity with good endurance. However, its multitude of polymorphs continues to pose a challenge for device fabrication. In particular, the naturally occurring formation of the metastable C49-TiSi$_2$ modification remains poorly understood and is problematic due to its unfavorable electronic properties. Based on extensive DFT calculations, we present a comprehensive model of Ti adsorption on Si(100) that highlights the pivotal role of surface topology for the initial stages of the interfacial TiSi$_2$ formation process. We show that the interplay between Si surface dimers, the symmetry of the Si(100) surface, and the incorporation of Ti adsorbates below the surface drives an adsorption pattern that yields a nucleation template for the C49-TiSi$_2$ phase. Our atomistic model rationalizes experimental observations like the Stranski-Krastanov growth mode, the preferential formation of C49-TiSi$_2$ despite it being less favorable than the competing C54 phase, and why disruption of the surface structure restores thermodynamically driven growth of the latter. Ultimately, this novel perspective on the unique growth of TiSi$_2$ will help to pave the way for next-generation electronic devices.