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Magnonic Combinatorial Memory for High-density Data Storage

Published 11 Sep 2025 in cond-mat.other and physics.app-ph | (2509.09890v1)

Abstract: There is an urgent need to enhance the storage density of memory devices to accommodate the exponentially increasing amount of data generated by humankind. In this work, we describe Magnonic Combinatorial Memory (MCM), where the bits of information are stored in the signal propagation paths in the network. The number of paths among the elements of the network is much larger compared to the number of elements, which makes it possible to enhance the data storage density compared to conventional memory devices. MCM is an active ring circuit consisting of electric and magnonic parts. The electric part includes a broadband amplifier, phase shifters, and frequency filters. The magnonic part is a mesh of frequency-dependent elements. Signal propagation path(s) in the mesh depend on the amplitude/phase matching between the electric and magnetic parts. The operation of the MCM is described based on the network model, where information is encoded in the S-parameters of the network elements as well as in the element arrangement in the network. We present experimental data for MCM with a four-terminal magnonic element. The element consists of a single-crystal yttrium iron garnet Y3Fe2(FeO4)3 (YIG) film and magnets on top of the film. There are four micro antennas aimed to convert electromagnetic waves into spin waves and vice versa. One of the antennas is used as an input port while the other three are the output ports. Experimental data show the prominent dependence of the element S-parameters on the magnet arrangement. The number of possible arrangements scales factorially with the number of magnets. There is a number of bits that can be encoded into one magnet arrangement. The results demonstrate a robust operation of MCM with an On/Off ratio for path detection exceeding 50 dB at room temperature. Physical limits and practical constraints of MCM are also discussed.

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