Metal oxide decoration on Si-FETs for selective gas sensing at room temperature (2505.10269v1)

Abstract: Metal oxide semiconductors have been thoroughly studied for gas sensing applications due to the electrical transduction phenomenon in the presence of gaseous analytes. The chemiresistive sensors prevalent in the applications have several challenges associated with them inclusive of instability, longevity, temperature/humidity sensitivity, and power consumption due to the need of heaters. Herein, we present a silicon field effect transistor-based gas sensor functionalized with CuO. The oxidized Cu thin film acts as a selective room temperature H2S sensor with impressive response and recovery. Using this methodology, we propose a standalone compact enose based on our results for a wide spectrum of gas detection.