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Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe$_2$-NbSe$_2$ monolayers

Published 27 May 2024 in cond-mat.mes-hall, cond-mat.mtrl-sci, and cond-mat.str-el | (2405.17231v1)

Abstract: Van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe$_2$ -- 1H-NbSe$_2$ lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure using scanning tunnelling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the one-dimensional interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explore the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials.

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