Magnetic-field-induced corner states in quantum spin Hall insulators

Abstract: We address the general problem of magnetic-field-induced corner states in quantum spin Hall insulators (QSHIs). Our analytical findings reveal that when applied to the QSHIs in zinc-blende semiconductor quantum wells (QWs), the presence of corner states extends beyond the anticipated range of meeting edges, surpassing the limitations imposed by crystal symmetry. We clearly demonstrate that, in the most general scenario, magnetic field-induced corner states in QSHIs are not topological. However, we find that the presence of crystal symmetry can stabilize these states only under specific orientations of the in-plane magnetic field and meeting edges. Therefore, contrary to previous assumptions, our research unveils that QSHIs in the presence of a magnetic field cannot be accurately considered as higher-order topological insulators. Furthermore, the lack of an inversion center in zinc-blende semiconductor QWs enables the emergence of corner states through the influence of a perpendicular magnetic field.