Two-dimensional ferromagnetic semiconductors of rare-earth Janus 2H-GdIBr monolayer with large valley polarization (2208.13613v1)

Abstract: Based on a rare-earth Gd atom with 4$f$ electrons, through first-principles calculations, we demonstrate that the Janus 2H-GdIBr monolayer exhibits an intrinsic ferromagnetic (FM) semiconductor character with an indirect band gap of 0.75 eV, high Curie temperature T${c}$ of 260 K, significant magnetic moment of 8 $\mu{B}$/f.u. (f.u.=formula unit), in-plane magnetic anisotropy (IMA) and large spontaneous valley polarization of 118 meV. The MAE, inter-atomic distance or angle, and T${c}$ can be efficiently modulated by in-plane strains and charge carrier doping. Under the strain range from $-$5% to 5% and charge carrier doping from $-$0.3e to 0.3e/f.u., the system still remains FM ordering and the corresponding T${c}$ can be modulated by strains from 233 K to 281 K and by charge carrier doping from 140 K to 245 K. Interestingly, under various strains, the matrix elements differences ($d_{z^{2}}$, $d_{yz}$), ($d_{x^{2}-y^{2}}$, $d_{xy}$) and ($p_{x}$, $p_{y}$) of Gd atoms dominate the MAE behaviors, which originates from the competition between the contributions of Gd-$d$, Gd-$p$ orbitals, and $p$ orbitals of halogen atoms based on the second-order perturbation theory. Inequivalent Dirac valleys are not energetic degenerate due to the time-reversal symmetry breaking in the Janus 2H-GdIBr monolayer. A considerable valley gap between the Berry curvature at the K and K$^{\prime}$ points provides an opportunity to selectively control the valley freedom and to manipulate the anomalous Hall effect. External tensile (compressive) strain further increases (decreases) the valley gap up to a maximum (minimum) value of 158 (37) meV, indicating that the valley polarization in the Janus 2H-GdIBr monolayer is robust to the external strains.