High-frequency traveling-wave phononic cavity with sub-micron wavelength (2202.07217v1)

Abstract: Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling phononic resonator based on high-acoustic-index-contrast mechanism is realized in GaN-on-Sapphire with a frequency up to 5 GHz, which matches the typical superconducting qubit frequency. A sixfold increment in quality factor was found when temperature decreases from room temperature ($Q=5000$) to $7\,\mathrm{K}$ ($Q=30000$) and thus a frequency-quality factor product of $1.5\times10^{14}$ is obtained. Higher quality factors are available when the fabrication process is further optimized. Our system shows great potential in hybrid quantum devices via circuit quantum acoustodynamics.