Simultaneous Control of Bandfilling and Bandwidth in Electric Double-Layer Transistor Based on Organic Mott Insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl

Abstract: The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moir\'e superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable. In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator $\kappa$-(BEDT-TTF)${2}$Cu[N(CN)${2}$]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The normal state under electric double-layer doping exhibited non-Fermi liquid behaviors as in many correlated materials. The doping levels for the superconductivity and the non-Fermi liquid behaviors were highly doping-asymmetric. Model calculations based on the anisotropic triangular lattice explained many phenomena and the doping asymmetry, implying the importance of the noninteracting band structure (particularly the flat part of the band).