Topological Magnetoelectric Response in Ferromagnetic Axion Insulators (2109.14160v3)

Abstract: Topological magnetoelectric effect (TME) is a haLLMark response of the topological field theory, which provides a paradigm shift in the study of emergent topological phenomena. However, its direct observation is yet to be realized due to the demanding magnetic configuration required to gap all the surface states. Here, we theoretically propose that the axion insulators with a simple ferromagnetic configuration, such as MnBi2Te4/(Bi2Te3)n family, provide an ideal playground to realize TME. In a designed triangular prism geometry, all the surface states are magnetically gapped. Under a vertical electric field, the surface Hall currents give rise to a nearly half-quantized orbital moment, accompanied with a gapless chiral hinge mode circulating parallelly. Thus, the orbital magnetization from the two topological origins can be easily distinguished by reversing the electric field. Our work paves a new avenue towards the direct observation of TME in realistic axion-insulator materials.