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Design and Comparative Analysis of a Two-Stage Ultra-Low-Power Subthreshold Operational Amplifier in 180nm, 90nm, and 45nm technology (2012.12088v1)
Published 22 Dec 2020 in eess.SY and cs.SY
Abstract: In this paper, a two-stage ultra-low-power operational amplifier is designed, and a comparative analysis of the proposed subthreshold complementary amplifier is presented between 180nm, 90nm, and 45nm CMOS technology. The proposed operational amplifier is compared across several different parameters to determine the optimal design. It achieves a maximum gain of around 75 dB and a phase margin of 76{\deg}, dissipating just 140nW with a supply voltage of 0.5 V which is well suited for biomedical applications that require low power and high gain. The proposed operational amplifier has been designed using a SPICE-based circuit simulator.