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A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Published 18 Dec 2020 in cond-mat.mtrl-sci, cond-mat.mes-hall, cond-mat.str-el, and physics.app-ph | (2012.10019v2)

Abstract: We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.

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