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All-Optically Controlled Memristor

Published 17 Apr 2020 in cond-mat.mtrl-sci and physics.app-ph | (2004.08077v1)

Abstract: Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is generally a two-terminal electronic element with conductance that varies nonlinearly with external electric stimuli and can be remembered when the electric power is turned off. As an alternative, light can be used to tune the memconductance and endow a memristor with a combination of the advantages of both photonics and electronics. Both increases and decreases in optically induced memconductance have been realized in different memristors; however, the reversible tuning of memconductance with light in the same device remains a considerable challenge that severely restricts the development of optoelectronic memristors. Here we describe an all-optically controlled (AOC) analog memristor with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. Our memristor is based on the relatively mature semiconductor material InGaZnO (IGZO) and a memconductance tuning mechanism of light-induced electron trapping and detrapping. We demonstrate that spike-timing-dependent plasticity (STDP) learning can be realized in our device, indicating its potential applications in AOC spiking neural networks (SNNs) for highly efficient optoelectronic neuromorphic computing.

Citations (187)

Summary

A Comprehensive Analysis of All-Optically Controlled Memristors

The paper entitled "All-Optically Controlled Memristor" explores the development of a memristor that is exclusively modulated by optical stimuli, thereby extending the conventional electrical control mechanisms. Utilizing amorphous Indium Gallium Zinc Oxide (IGZO) as the foundation, the authors present a novel approach where the memristive properties can be adjusted reversibly by varying the wavelength of incident light—achieving significant strides toward an efficient integration of photonics and electronics.

Key Contributions and Findings

The authors introduce a distinct memconductance modulation mechanism predicated on the trapping and detrapping of electrons induced by light, ensuring non-volatile states. The study's primary achievement is the ability to reversibly tune memconductance solely with optical methods, circumventing the complexity and limitations posed by the current reliance on mixed optical-electrical stimulations.

  1. Mechanism and Structure: The memristor leverages the IGZO semiconductor's wide bandgap properties. Specifically, a bilayer homojunction configuration involving oxygen-deficient (O_D-IGZO) and oxygen-rich (O_R-IGZO) variant layers establishes the foundation for memristive behavior and optical sensitivity.

  2. Optical Modulation: The transition to a high memconductance state (HMS) is achievable through controlled blue light exposure, exploiting the differential energy levels in oxygen vacancies within the IGZO. In contrast, infrared light facilitates a return to a low memconductance state (LMS), demonstrating the device's capacity for optical RESET operations.

  3. Neuromorphic Applications: The potential for optically controlled synaptic emulation is demonstrated through the realization of spike-timing-dependent plasticity (STDP), which is fundamental in SNNs for neuromorphic computing. The reversible optical tuning signifies potential in applications such as adaptive learning within photonic SNN frameworks.

Implications and Future Directions

The implications of this research highlight a pivotal step toward practical and efficient optoelectronic computing systems, particularly in neuromorphic applications. By eliminating the necessity for electronic control in tuning memconductance, the study augments the prospect of lower complexity and higher density memristor arrays.

Theoretically, this advancement could prompt further inquiries into designing fully optical computing architectures, reduce power consumption in neuromorphic systems, and improve hardware efficiency in implementing neural-inspired learning rules. Future research avenues could explore scalable integration methods and enhancing optical responses across diverse wavelengths to further harmonize the functionalities of electronics with optical technologies.

In conclusion, by overcoming the current limitations of optoelectronic memristor control, the study contributes to the broader effort of advancing neuromorphic computing and posits a significant milestone in the ongoing evolution of memory devices. The semi-nonvolatile nature of the memristor, characterized by a persistent decay in photocurrents, also raises intriguing parallels with biological memory systems, pointing to the need for further optimization tailored toward artificial neural network applications.

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