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Topological quantum phase transition and superconductivity induced by pressure in the bismuth tellurohalide BiTeI

Published 17 Oct 2016 in cond-mat.supr-con | (1610.05364v1)

Abstract: A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor BiTeI with giant Rashba spin splitting. In this work, the evolution of the electrical transport properties in BiTeI and BiTeBr is investigated under high pressure. The pressure-dependent resistivity in a wide temperature range passes through a minimum at around 3 GPa, indicating the predicted transition in BiTeI. Superconductivity is observed in both BiTeI and BiTeBr while the resistivity at higher temperatures still exhibits semiconducting behavior. Theoretical calculations suggest that the superconductivity may develop from the multi-valley semiconductor phase. The superconducting transition temperature Tc increases with applied pressure and reaches a maximum value of 5.2 K at 23.5 GPa for BiTeI (4.8 K at 31.7 GPa for BiTeBr), followed by a slow decrease. Our results demonstrate that BiTeX (X = I, Br) compounds with non-trivial topology of electronic states display new ground states upon compression.

Citations (240)

Summary

  • The paper demonstrates a topological quantum phase transition near 3 GPa, evidenced by a distinct resistivity minimum and band inversion in BiTeI.
  • It reveals the onset of superconductivity with T₍c₎ peaking at 5.2 K for BiTeI at high pressures, validated through structural phase transitions observed via XRD.
  • The integration of density functional theory with experimental findings supports potential applications in spintronic devices and novel quantum materials.

Analysis of Pressure-Induced Topological Quantum Phase Transition and Superconductivity in Bismuth Tellurohalides

The study of bismuth tellurohalides, specifically the compounds BiTeI and BiTeBr, highlights significant developments in understanding pressure-induced topological quantum phase transitions (TQPT) and superconductivity. These materials exhibit giant Rashba spin splitting, making them compelling candidates for spintronic applications. The recent investigation presented in this paper addresses several key aspects of their behavior under varying pressures, offering insights into the underlying mechanisms driving observed quantum phenomena.

Topological Quantum Phase Transition Mechanism

The research substantiates the theoretical prediction of a TQPT in BiTeI, occurring at approximately 3 GPa. This transition is marked by a distinct minimum in the pressure-dependent resistivity, supporting earlier computational models. Notably, the Rashba spin splitting in these compounds stems from the absence of inversion symmetry, allowing unique opportunities for realizing topological magneto-electric effects. An analysis of pressure-dependent electrical transport properties further suggests a non-trivial topological phase, characterized by a semimetallic state at zero-gap, which transitions into a topological insulator phase as pressure continues to increase, leading to an inversion of the valence and conduction bands.

Superconductivity Under High Pressure

A critical finding of this study is the emergence of superconductivity in both BiTeI and BiTeBr at high pressures, even as they maintain semiconducting behavior in the normal state. The superconducting transition temperatures (T_c) in these compounds peak at 5.2 K for BiTeI at 23.5 GPa and 4.8 K for BiTeBr at 31.7 GPa, respectively. These observations coincide with structural phase transitions determined through X-ray diffraction (XRD) analyses, specifically transitions from the P3m1 structure to Pnma and eventually to P4/nmm phases at higher pressures. Theoretical calculations reveal that the superconductivity in the Pnma phase may originate from multi-valley bands, suggesting that electron-electron interactions facilitated by intra- and inter-valley phonon exchanges are likely superconductivity mechanisms.

Implications and Future Prospects

The elucidation of the high-pressure phases and band structures using density functional theory (DFT) strongly supports the experimental transport data. The findings imply a significant alteration in electronic properties under pressure, offering important clues for the exploration of novel superconducting states in topologically non-trivial materials. Given the robust nature of the topological and superconducting phases observed, further research could explore the potential applications of these materials in electronic and spintronic devices. Moreover, future investigations may expand the study to encompass other bismuth tellurohalides or similar systems, with the aim of enhancing our understanding of the intersection between topological states and superconductivity.

In conclusion, this paper contributes critical insights into the behavior of BiTeI and BiTeBr under pressure, confirming theoretical predictions and expanding the scope of experimental observations on TQPT and pressure-induced superconductivity. These advancements are poised to aid in the development of next-generation quantum materials with impactful technological applications.

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