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Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model

Published 22 Feb 2016 in cond-mat.mtrl-sci | (1605.04937v2)

Abstract: The Moir\'{e} structure of epitaxial graphene mono layer grown on 6H-SiC(0001) has been investigated recently by grazing incidence fast atom diffraction, and the results were compared with the calculation of the structure \textit{ab initio} and exact diffraction codes. We review these results and present a complementary approach using the Hard Wall Model to extract information without any \textit{a priori}. Reversely, taking advantage of previous exact calculations we evaluate quantitatively the performance of this simplified approach by comparing predictions using the same potential energy surface.

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