Papers
Topics
Authors
Recent
Search
2000 character limit reached

Diffraction Patterns of Layered Close-packed Structures from Hidden Markov Models

Published 19 Oct 2014 in cond-mat.mtrl-sci, cs.IT, math.IT, math.ST, and stat.TH | (1410.5028v1)

Abstract: We recently derived analytical expressions for the pairwise (auto)correlation functions (CFs) between modular layers (MLs) in close-packed structures (CPSs) for the wide class of stacking processes describable as hidden Markov models (HMMs) [Riechers \etal, (2014), Acta Crystallogr.~A, XX 000-000]. We now use these results to calculate diffraction patterns (DPs) directly from HMMs, discovering that the relationship between the HMMs and DPs is both simple and fundamental in nature. We show that in the limit of large crystals, the DP is a function of parameters that specify the HMM. We give three elementary but important examples that demonstrate this result, deriving expressions for the DP of CPSs stacked (i) independently, (ii) as infinite-Markov-order randomly faulted 2H and 3C stacking structures over the entire range of growth and deformation faulting probabilities, and (iii) as a HMM that models Shockley-Frank stacking faults in 6H-SiC. While applied here to planar faulting in CPSs, extending the methods and results to planar disorder in other layered materials is straightforward. In this way, we effectively solve the broad problem of calculating a DP---either analytically or numerically---for any stacking structure---ordered or disordered---where the stacking process can be expressed as a HMM.

Citations (9)

Summary

No one has generated a summary of this paper yet.

Paper to Video (Beta)

No one has generated a video about this paper yet.

Whiteboard

No one has generated a whiteboard explanation for this paper yet.

Open Problems

We haven't generated a list of open problems mentioned in this paper yet.

Continue Learning

We haven't generated follow-up questions for this paper yet.

Collections

Sign up for free to add this paper to one or more collections.