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Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments

Published 7 Oct 2013 in physics.ins-det and hep-ex | (1310.1902v1)

Abstract: The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.

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